IPB096N03LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs (Max) :

±20V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

35A

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

40 mJ

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Pulsed Drain Current-Max (IDM) :

245A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0141Ohm

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 30A, 10V

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

No

Case Connection :

DRAIN

Power Dissipation-Max :

42W Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING