IPB096N03LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

Infineon Technologies AG

Number of Terminals :

2

Drain-source On Resistance-Max :

0.0141 Ω

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

40 mJ

FET Feature :

-

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max (Abs) :

42 W

Drain Current-Max (Abs) (ID) :

35 A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

245 A

Supplier Device Package :

PG-TO263-3

Operating Temperature :

-55°C ~ 175°C (TJ)

Series :

OptiMOS™3

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 30A, 10V

Power Dissipation (Max) :

42W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

JEDEC-95 Code :

TO-263AB

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 15 V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30 V

Technology :

MOSFET (Metal Oxide)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Subcategory :

FET General Purpose Power

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Status :

Active

DS Breakdown Voltage-Min :

30 V

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Package :

Bulk

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes