IPB093N04LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Power Dissipation :

47W

Case Connection :

DRAIN

Number of Terminations :

2

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4

Continuous Drain Current (ID) :

50A

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 50A, 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 20V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

OptiMOS™

Terminal Form :

Gull wing

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0093Ohm

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Power Dissipation-Max :

47W Tc

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 16μA

Drain Current-Max (Abs) (ID) :

46A

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Published :

2007

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE