IPB090N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 30V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Rise Time :

40ns

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Pin Count :

4

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Continuous Drain Current (ID) :

50A

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.009Ohm

Vgs(th) (Max) @ Id :

4V @ 34µA

Power Dissipation-Max :

71W Tc

Power Dissipation :

71W

Reach Compliance Code :

not_compliant

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Turn-Off Delay Time :

20 ns

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Fall Time (Typ) :

5 ns

Pulsed Drain Current-Max (IDM) :

200A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB