IPB085N06L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Operating Temperature (Max) :

175°C

Series :

OptiMOS™

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape (CT)

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

188W

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 125μA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0082Ohm

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Number of Terminations :

2

FET Type :

N-Channel

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

320A

ECCN Code :

EAR99

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

370 mJ

Number of Elements :

1

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE