IPB083N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Vgs (Max) :

±20V

Turn On Delay Time :

18 ns

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Number of Terminations :

2

Pbfree Code :

No

Series :

OptiMOS™

Turn-Off Delay Time :

31 ns

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 73A, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Power Dissipation-Max :

125W Tc

Published :

2008

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Elements :

1

Max Dual Supply Voltage :

100V

Rise Time :

42ns

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

80A

Qualification Status :

Not Qualified

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V