IPB081N06L3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Power Dissipation :

79W

Continuous Drain Current (ID) :

50A

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

8.1m Ω @ 50A, 10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

37 ns

REACH SVHC :

No SVHC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Power Dissipation-Max :

79W Tc

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

7 ns

Mount :

Surface Mount

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

2.2V @ 34μA

Published :

2008

Number of Pins :

3

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Terminal Form :

Gull wing

Threshold Voltage :

1.7V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Halogen Free :

Halogen Free

FET Type :

N-Channel

Pin Count :

4

Rise Time :

26ns

Transistor Element Material :

SILICON

Terminal Position :

Single

Turn On Delay Time :

15 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 30V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED