IPB080N06N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

448 mJ

Series :

OptiMOS™

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0077Ohm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Surface Mount :

yes

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Vgs(th) (Max) @ Id :

4V @ 150μA

Drain Current-Max (Abs) (ID) :

80A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 80A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2011

Pulsed Drain Current-Max (IDM) :

320A

Pin Count :

4

Terminal Position :

Single

Power Dissipation-Max :

214W Tc

Terminal Finish :

MATTE TIN