IPB080N06N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 150μA

Power Dissipation-Max :

214W Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 80A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Avalanche Energy Rating (Eas) :

448 mJ

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0077Ohm

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Pulsed Drain Current-Max (IDM) :

320A

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)