IPB080N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Rise Time :

3.6ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

48A

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Power Dissipation :

47W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Case Connection :

DRAIN

Continuous Drain Current (ID) :

50A

Pin Count :

4

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Max Dual Supply Voltage :

30V

Turn-Off Delay Time :

18 ns

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Halogen Free :

Halogen Free

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 15V

Power Dissipation-Max :

47W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

2.8 ns

Avalanche Energy Rating (Eas) :

50 mJ

Turn On Delay Time :

4.6 ns

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Pbfree Code :

No

Published :

2008

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

ECCN Code :

EAR99

Number of Terminations :

2