IPB073N15N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

456A

Number of Elements :

1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Series :

OptiMOS™-5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

214W Tc

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.6V @ 160μA

Drain to Source Voltage (Vdss) :

150V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0073Ohm

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 75V

Drain Current-Max (Abs) (ID) :

114A

Avalanche Energy Rating (Eas) :

130 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

114A Tc

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 57A, 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

150V

Terminal Form :

Gull wing

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)