IPB072N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 100A, 10V

Pin Count :

4

Avalanche Energy Rating (Eas) :

780 mJ

Vgs(th) (Max) @ Id :

4V @ 270μA

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Number of Terminations :

2

Max Dual Supply Voltage :

150V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Turn-Off Delay Time :

46 ns

Power Dissipation-Max :

300W Tc

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Fall Time (Typ) :

14 ns

Continuous Drain Current (ID) :

100A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

Power Dissipation :

300W

Halogen Free :

Halogen Free

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Drain-source On Resistance-Max :

0.0072Ohm

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

25 ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rise Time :

35ns

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5470pF @ 75V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2