IPB072N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Continuous Drain Current (ID) :

100A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 270μA

Rise Time :

35ns

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pbfree Code :

No

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0072Ohm

Series :

OptiMOS™

ECCN Code :

EAR99

Number of Terminations :

2

Fall Time (Typ) :

14 ns

Number of Pins :

3

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

46 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

780 mJ

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 100A, 10V

Turn On Delay Time :

25 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5470pF @ 75V

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Max Dual Supply Voltage :

150V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Halogen Free :

Halogen Free

FET Type :

N-Channel

Number of Elements :

1