IPB072N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

400A

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5470pF @ 75V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

25 ns

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Avalanche Energy Rating (Eas) :

780 mJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0072Ohm

Mount :

Surface Mount

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Turn-Off Delay Time :

46 ns

Fall Time (Typ) :

14 ns

Series :

OptiMOS™

Max Dual Supply Voltage :

150V

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Published :

2008

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 270μA

Rise Time :

35ns

Terminal Form :

Gull wing

Terminal Position :

Single