IPB070N06L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0067Ohm

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

450 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

Drain Current-Max (Abs) (ID) :

80A

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 30V

Power Dissipation-Max :

214W Tc

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Number of Terminations :

2

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Pin Count :

4

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 150μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSSO-G2