IPB06N03LB

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current Rating :

50A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

200A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

OptiMOS™

Published :

2006

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

50A

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2782pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 40µA

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 50A, 10V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0063Ohm

Lead Free :

Contains Lead

Pin Count :

4

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

164 mJ

Additional Feature :

LOGIC LEVEL COMPATIBLE