IPB06CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 100A, 10V

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

214W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Surface Mount :

yes

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.0062Ohm

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 50V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 180μA

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Series :

OptiMOS™

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

480 mJ

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

100A

Number of Elements :

1