IPB067N08N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

136W Tc

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

80V

Number of Terminations :

2

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs(th) (Max) @ Id :

3.5V @ 73µA

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 40V

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

320A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

150 mJ

Packaging :

Tape and Reel (TR)

Pin Count :

4

Drain Current-Max (Abs) (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Pbfree Code :

No

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0067Ohm

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 73A, 10V

Operating Mode :

ENHANCEMENT MODE