IPB065N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Pbfree Code :

No

Max Dual Supply Voltage :

150V

Continuous Drain Current (ID) :

130A

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 100A, 10V

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

ECCN Code :

EAR99

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Series :

OptiMOS™

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0065ohm

Turn On Delay Time :

25 ns

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins :

7

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Rise Time :

35ns

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 75V

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Turn-Off Delay Time :

46 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 270μA

Power Dissipation-Max :

300W Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

520A

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G6

Qualification Status :

Not Qualified