IPB065N06LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Compliant

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Published :

2011

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Series :

OptiMOS™

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 180μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0062Ohm

Pulsed Drain Current-Max (IDM) :

320A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 30V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Avalanche Energy Rating (Eas) :

530 mJ

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V