IPB065N03LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

56W

Number of Elements :

1

Terminal Form :

Gull wing

Power Dissipation-Max :

56W Tc

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

21 ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

60 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

4.2ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

52 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 30A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn On Delay Time :

5.5 ns

Drain-source On Resistance-Max :

0.0095Ohm

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Max Dual Supply Voltage :

30V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount

Published :

2008

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

50A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Fall Time (Typ) :

3.4 ns

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount