IPB05N03LB

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Position :

Single

Power Dissipation-Max :

94W Tc

Voltage - Rated DC :

30V

Avalanche Energy Rating (Eas) :

136 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Current Rating :

80A

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Continuous Drain Current (ID) :

80A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5m Ω @ 60A, 10V

Vgs(th) (Max) @ Id :

2V @ 40µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3209pF @ 15V

Drain-source On Resistance-Max :

0.005ohm

Pbfree Code :

yes

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

320A

Transistor Element Material :

SILICON

Series :

OptiMOS™

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Qualification Status :

Not Qualified