IPB05N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Published :

2006

Pulsed Drain Current-Max (IDM) :

385A

Vgs(th) (Max) @ Id :

2V @ 50μA

Drain-source On Resistance-Max :

0.0078Ohm

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Case Connection :

DRAIN

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

94W Tc

Avalanche Energy Rating (Eas) :

190 mJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Number of Terminations :

2

DS Breakdown Voltage-Min :

25V

Series :

OptiMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 55A, 10V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

80A

Transistor Element Material :

SILICON

Pin Count :

4