IPB05CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

181nC @ 10V

Drain Current-Max (Abs) (ID) :

100A

Number of Elements :

1

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0051Ohm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

OptiMOS™

Power Dissipation-Max :

300W Tc

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

826 mJ

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

MATTE TIN

Terminal Position :

Single

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pin Count :

4

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

RoHS Status :

RoHS Compliant