IPB057N06NATMA1
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- Mfr.Part #
- IPB057N06NATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/45A D2PAK
- Stock
- 22,167
- In Stock ：
- 22,167
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 45A, 10V
- Power Dissipation :
- 83W
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 12 ns
- Max Dual Supply Voltage :
- 60V
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Drain to Source Breakdown Voltage :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 45A
- Series :
- OptiMOS™
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 7 ns
- Turn-Off Delay Time :
- 20 ns
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.8V @ 36μA
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Rise Time :
- 12ns
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 3W Ta 83W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Published :
- 2012
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 45A Tc
- Datasheets
- IPB057N06NATMA1
N-Channel Cut Tape (CT) 5.7m Ω @ 45A, 10V ±20V 2000pF @ 30V 27nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB057N06NATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2000pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
IPB057N06NATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
IPB057N06NATMA1 Applications
There are a lot of Infineon Technologies
IPB057N06NATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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