IPB052N04NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 33µA

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

FET Type :

N-Channel

Power Dissipation :

79W

Number of Elements :

1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 70A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Published :

2011

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

79W Tc

Mount :

Surface Mount

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0052Ohm

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Continuous Drain Current (ID) :

70A

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

35 mJ

Operating Mode :

ENHANCEMENT MODE