IPB051NE8NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

85 V

FET Feature :

-

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

4

Drain-source On Resistance-Max :

0.0051 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Terminal Position :

Single

Product Status :

Active

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Polarity/Channel Type :

N-Channel

Manufacturer :

Rochester Electronics LLC

Drain to Source Voltage (Vdss) :

85 V

Number of Terminals :

2

Rds On (Max) @ Id, Vgs :

5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

12100 pF @ 40 V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

400 A

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

JEDEC-95 Code :

TO-263AB

Package :

Bulk

Power Dissipation (Max) :

300W (Tc)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Series :

OptiMOS™2

Operating Temperature :

-55°C ~ 175°C (TJ)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

826 mJ

Peak Reflow Temperature (Cel) :

260

Supplier Device Package :

PG-TO263-3-2

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

Pbfree Code :

yes