IPB050N06NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 270μA

Continuous Drain Current (ID) :

100A

Pulsed Drain Current-Max (IDM) :

400A

Published :

2007

Pbfree Code :

yes

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

167nC @ 10V

JESD-609 Code :

e3

Pin Count :

4

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 100A, 10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 30V

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0047Ohm

Power Dissipation :

300W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB