IPB04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation-Max :

107W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Rise Time :

4.5ns

Avalanche Energy Rating (Eas) :

290 mJ

Vgs (Max) :

±20V

Case Connection :

DRAIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Pin Count :

4

Terminal Form :

Gull wing

Current Rating :

80A

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

25V

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 55A, 10V

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0064Ohm

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Published :

2003

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 60μA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

80A

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

385A

Current - Continuous Drain (Id) @ 25°C :

80A Tc