IPB049N06L3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

80A

Surface Mount :

yes

Power Dissipation-Max :

115W Tc

Vgs(th) (Max) @ Id :

2.2V @ 58μA

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 30V

Published :

2011

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0047Ohm

Pin Count :

4

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

320A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

77 mJ

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc