IPB048N15N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

300W Tc

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 75V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

150V

Drain to Source Voltage (Vdss) :

150V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.6V @ 264μA

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

230 mJ

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 60A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

120A

Pulsed Drain Current-Max (IDM) :

480A

Factory Lead Time :

13 Weeks

Drain-source On Resistance-Max :

0.0048Ohm

Number of Terminations :

2

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Number of Elements :

1