IPB048N06LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

RoHS Status :

RoHS Compliant

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0044Ohm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 270µA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100A

Series :

OptiMOS™

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Published :

2007

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 30V

Mount :

Surface Mount

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 100A, 10V

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation-Max :

300W Tc

Number of Terminations :

2

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

810 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE