IPB048N06LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

FET General Purpose Power

Package :

Bulk

Power Dissipation-Max (Abs) :

300 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

810 mJ

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

100 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

JEDEC-95 Code :

TO-263AB

Operating Temperature :

-55°C ~ 175°C (TJ)

Transistor Element Material :

SILICON

Supplier Device Package :

PG-TO-263-3-2

Drain to Source Voltage (Vdss) :

60 V

Rds On (Max) @ Id, Vgs :

4.7mOhm @ 100A, 10V

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Technology :

MOSFET (Metal Oxide)

Channel Type :

N

Number of Elements :

1

FET Feature :

-

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Package Shape :

RECTANGULAR

Product Status :

Active

Power Dissipation (Max) :

300W (Tc)

Vgs(th) (Max) @ Id :

2V @ 270µA

FET Type :

N-Channel

Pin Count :

4

Number of Terminals :

2

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

DS Breakdown Voltage-Min :

60 V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

7600 pF @ 30 V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0044 Ω

Gate Charge (Qg) (Max) @ Vgs :

225 nC @ 10 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id :

100

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

1 Week

Manufacturer :

Infineon Technologies AG

Series :

OptiMOS®

Pulsed Drain Current-Max (IDM) :

400 A

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing