IPB044N15N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

696A

Avalanche Energy Rating (Eas) :

470 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

24 ns

Number of Elements :

1

Surface Mount :

yes

Terminal Position :

Single

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 87A, 10V

Published :

2013

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

174A Tc

Continuous Drain Current (ID) :

174A

Height :

4.5mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

150V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0044Ohm

Case Connection :

DRAIN

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 75V

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

JESD-30 Code :

R-PSSO-G6

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power Dissipation :

300W

Vgs(th) (Max) @ Id :

4.6V @ 264μA

Power Dissipation-Max :

300W Tc

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Terminations :

6

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

19 ns

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

13 Weeks