IPB042N10N3GE8187ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Fall Time (Typ) :

14 ns

Packaging :

Tape and Reel (TR)

Published :

2005

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Vgs (Max) :

±20V

Mount :

Surface Mount

Terminal Position :

Single

Case Connection :

DRAIN

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

100A

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Rise Time :

59ns

Factory Lead Time :

13 Weeks

Current - Continuous Drain (Id) @ 25°C :

100A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 50A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0042Ohm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

41 ns

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

48 ns

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

214W Tc

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1