IPB042N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

ECCN Code :

EAR99

Terminal Position :

Single

Continuous Drain Current (ID) :

137A

Rise Time :

59ns

Max Junction Temperature (Tj) :

175°C

Height :

4.7mm

Vgs (Max) :

±20V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Published :

2008

Turn-Off Delay Time :

48 ns

Series :

OptiMOS™

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Max Dual Supply Voltage :

100V

Pin Count :

4

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 50A, 10V

Power Dissipation-Max :

214W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Fall Time (Typ) :

14 ns

Case Connection :

DRAIN

Pbfree Code :

No

Mount :

Surface Mount

Number of Elements :

1

Halogen Free :

Halogen Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

214W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0042Ohm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

3.5V @ 150μA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

27 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Pins :

3