IPB042N03LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Power Dissipation-Max :

79W Tc

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Halogen Free :

Halogen Free

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

60 mJ

Packaging :

Tape and Reel (TR)

Power Dissipation :

79W

Pin Count :

4

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Number of Elements :

1

Continuous Drain Current (ID) :

70A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.006Ohm

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

FET Type :

N-Channel

JESD-609 Code :

e3