IPB03N03LB

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

30V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

Non-RoHS Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

2006

Number of Terminations :

2

Lead Free :

Contains Lead

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

80A

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 55A, 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 100µA

Vgs (Max) :

±20V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7624pF @ 15V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

320A

Current Rating :

80A

Drain-source On Resistance-Max :

0.0039Ohm

Power Dissipation-Max :

150W Tc

Pin Count :

4

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

580 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 5V

Mounting Type :

Surface Mount

Series :

OptiMOS™

Qualification Status :

Not Qualified

ECCN Code :

EAR99