IPB03N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 5V

Case Connection :

DRAIN

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

7027pF @ 15V

Series :

OptiMOS™

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Pin Count :

4

Current Rating :

80A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Voltage - Rated DC :

25V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 55A, 10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.0041Ohm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

150W Tc

Vgs (Max) :

±20V

Number of Terminations :

2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

220

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

385A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 100µA

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

960 mJ

Number of Elements :

1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc