IPB039N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

59ns

Terminal Form :

Gull wing

Pbfree Code :

No

Number of Pins :

7

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

340 mJ

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Turn-Off Delay Time :

48 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 160μA

Lead Free :

Contains Lead

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 100A, 10V

Mount :

Surface Mount

Power Dissipation :

214W

Power Dissipation-Max :

214W Tc

Number of Elements :

1

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Number of Terminations :

6

Max Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

JESD-609 Code :

e3

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

Terminal Position :

Single

Fall Time (Typ) :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0039Ohm

JESD-30 Code :

R-PSSO-G6

Continuous Drain Current (ID) :

160A

Published :

2008

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

640A

JEDEC-95 Code :

TO-263AA

Factory Lead Time :

13 Weeks

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Halogen Free :

Halogen Free