IPB034N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 93µA

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.0034Ohm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

149 mJ

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

100A

Number of Elements :

1

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Pin Count :

7

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

400A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Power Dissipation-Max :

167W Tc

Vgs (Max) :

±20V

Number of Terminations :

6

JESD-30 Code :

R-PSSO-G6

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

OptiMOS™

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

11000pF @ 30V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel