IPB034N06L3GATMA1
- Mfr.Part #
- IPB034N06L3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A D2PAK
- Stock
- 3,220
- In Stock :
- 3,220
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.2V @ 93µA
- Fall Time (Typ) :
- 13 ns
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Max Dual Supply Voltage :
- 60V
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 90A, 10V
- Turn On Delay Time :
- 25 ns
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2008
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 167W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 13000pF @ 30V
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 64 ns
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- No
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 79nC @ 4.5V
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 90A
- Power Dissipation :
- 167W
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- DRAIN
- Rise Time :
- 78ns
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Datasheets
- IPB034N06L3GATMA1

N-Channel Tape & Reel (TR) 3.4m Ω @ 90A, 10V ±20V 13000pF @ 30V 79nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB034N06L3GATMA1 Description
IPB034N06L3GATMA1 is a OptiMOS" 3 Power-Transistor. With innovation and best-in-class performance at the heart of Infineon, we are rendering the supply of outstanding products to the marketplace. The new OptiMOS™ devices are a perfect fit for enhanced efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS) for telecom bricks and server applications and portable chargers. In addition, the portfolio includes an optimized device with the industry's lowest (RDS(on) (0.9 mΩ at VGS=10 V). targeting mainly Or-ing circuits.
IPB034N06L3GATMA1 Features
ldeal for high-frequency switching and sync. rec.
Optimized technology for DCIDC converters
Excellent gate charge x R DS/(on, .
product (FOM)
Very low on-resistance Ros(on)
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC" for target applications
IPB034N06L3GATMA1 Applications
SMPS
Server
Telecom DC-DC converters
Portable chargers
Or-ing switches
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