IPB034N03LGATMA1

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Mfr.Part #
IPB034N03LGATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 80A D2PAK
Stock
13,109
In Stock :
13,109

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
4
Series :
OptiMOS™
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
9.2 ns
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 15V
Number of Elements :
1
Continuous Drain Current (ID) :
80A
Fall Time (Typ) :
5.4 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
35 ns
JESD-30 Code :
R-PSSO-G2
Halogen Free :
Halogen Free
Number of Pins :
3
Pbfree Code :
No
Vgs (Max) :
±20V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Avalanche Energy Rating (Eas) :
70 mJ
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
400A
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Power Dissipation-Max :
94W Tc
Lead Free :
Contains Lead
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Max Dual Supply Voltage :
30V
Power Dissipation :
94W
Drain-source On Resistance-Max :
0.0047Ohm
RoHS Status :
ROHS3 Compliant
Published :
2008
Factory Lead Time :
13 Weeks
Rise Time :
6.4ns
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Datasheets
IPB034N03LGATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB034N03LGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IPB034N03LGATMA1 pinout, IPB034N03LGATMA1 datasheet PDF, IPB034N03LGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB034N03LGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB034N03LGATMA1


N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 5300pF @ 15V 51nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB034N03LGATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 70 mJ.The maximum input capacitance of this device is 5300pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IPB034N03LGATMA1 Features


the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 35 ns
based on its rated peak drain current 400A.


IPB034N03LGATMA1 Applications


There are a lot of Infineon Technologies
IPB034N03LGATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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