IPB032N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

166A Tc

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

JESD-30 Code :

R-PSSO-G6

Input Capacitance (Ciss) (Max) @ Vds :

6970pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Drain-source On Resistance-Max :

0.0032Ohm

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 83A, 10V

Transistor Application :

SWITCHING

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Drain Current-Max (Abs) (ID) :

166A

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

233 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

3.8V @ 125μA

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

664A

Published :

2013

Power Dissipation-Max :

187W Tc

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel