IPB032N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

166A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

233 mJ

Factory Lead Time :

13 Weeks

Published :

2013

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

166A Tc

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 83A, 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.8V @ 125μA

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G6

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Power Dissipation-Max :

187W Tc

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

664A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0032Ohm

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6970pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)