IPB031NE7N3GATMA1
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- Mfr.Part #
- IPB031NE7N3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO263-3
- Stock
- 54,171
- In Stock ：
- 54,171
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 85ns
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Published :
- 2008
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 75V
- Turn On Delay Time :
- 16 ns
- Series :
- OptiMOS™
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 13 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 100A
- Fall Time (Typ) :
- 10 ns
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 100A, 10V
- Power Dissipation :
- 214W
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- No
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 214W Tc
- Vgs(th) (Max) @ Id :
- 3.8V @ 155μA
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 117nC @ 10V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 400A
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- Tin (Sn)
- DS Breakdown Voltage-Min :
- 75V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 8130pF @ 37.5V
- Datasheets
- IPB031NE7N3GATMA1
N-Channel Tape & Reel (TR) 3.1m Ω @ 100A, 10V ±20V 8130pF @ 37.5V 117nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB031NE7N3GATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 640 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8130pF @ 37.5V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB031NE7N3GATMA1 Features
the avalanche energy rating (Eas) is 640 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 40 ns
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)
IPB031NE7N3GATMA1 Applications
There are a lot of Infineon Technologies
IPB031NE7N3GATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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