IPB031N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 40V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.8V @ 108μA

Number of Elements :

1

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Power Dissipation-Max :

167W Tc

Number of Terminations :

2

Max Dual Supply Voltage :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Continuous Drain Current (ID) :

120A

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Published :

2013

FET Type :

N-Channel

Vgs (Max) :

±20V

ECCN Code :

EAR99

Weight :

3.949996g

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

37 ns

Number of Channels :

1

Rise Time :

18ns

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Turn On Delay Time :

18 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 100A, 10V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

480A