IPB027N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

480A

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Number of Pins :

3

Pbfree Code :

yes

Case Connection :

DRAIN

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.8V @ 184μA

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

250W Tc

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Rise Time :

15ns

Number of Channels :

1

Turn-Off Delay Time :

52 ns

Continuous Drain Current (ID) :

120A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 50V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

26 ns

Published :

2015

Fall Time (Typ) :

17 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

FET Type :

N-Channel

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0027Ohm

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

3.949996g