IPB027N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

100V

Number of Elements :

1

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Weight :

3.949996g

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn On Delay Time :

26 ns

Terminal Form :

Gull wing

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Pins :

3

Power Dissipation-Max :

250W Tc

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.8V @ 184μA

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0027Ohm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

480A

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

52 ns

Case Connection :

DRAIN

Continuous Drain Current (ID) :

120A

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 50V

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Pbfree Code :

yes