IPB026N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

30 ns

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400A

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0026Ohm

Drain Current-Max (Abs) (ID) :

25A

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~175°C TJ

Halogen Free :

Halogen Free

Power Dissipation-Max :

3W Ta 136W Tc

Series :

OptiMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Packaging :

Cut Tape (CT)

Max Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

2.8V @ 75μA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Lead Free :

Contains Lead

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Rise Time :

15ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Pbfree Code :

No

Continuous Drain Current (ID) :

100A

Published :

2008

Turn On Delay Time :

17 ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Power Dissipation :

136W

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

25A Ta 100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 30V

Fall Time (Typ) :

8 ns

Transistor Element Material :

SILICON

Number of Terminations :

2

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount