IPB025N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Turn-Off Delay Time :

84 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

JESD-30 Code :

R-PSSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

180A Tc

FET Type :

N-Channel

Halogen Free :

Halogen Free

Published :

2008

Turn On Delay Time :

34 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 100A, 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

28 ns

Number of Pins :

7

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

300W Tc

JESD-609 Code :

e3

Rise Time :

58ns

Continuous Drain Current (ID) :

180A

Number of Elements :

1

Max Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Pin Count :

4

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

206nC @ 10V

Drain-source On Resistance-Max :

0.0025Ohm

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 275μA

Power Dissipation :

300W

Gate to Source Voltage (Vgs) :

20V