IPB025N08N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

80 V

Gate Charge (Qg) (Max) @ Vgs :

206 nC @ 10 V

Number of Terminals :

2

Supplier Device Package :

PG-TO263-3-2

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 270µA

Mounting Type :

Surface Mount

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation (Max) :

300W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

480A

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™3

Drain Current-Max (Abs) (ID) :

120A

Pbfree Code :

icon-pbfree no

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

DS Breakdown Voltage-Min :

80V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0025Ohm

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

14200 pF @ 40 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max (Abs) :

300W

Technology :

MOSFET (Metal Oxide)

FET Feature :

-

JESD-609 Code :

e3

Vgs (Max) :

±20V

Package :

Bulk

Operating Temperature :

-55°C ~ 175°C (TJ)

Avalanche Energy Rating (Eas) :

1430 mJ

Terminal Position :

Single

Operating Temperature (Max) :

175°C

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 100A, 10V

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes