IPB024N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Terminal Position :

Single

Case Connection :

DRAIN

Number of Terminations :

6

Factory Lead Time :

13 Weeks

Published :

2013

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

180A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

250W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.8V @ 183μA

Input Capacitance (Ciss) (Max) @ Vds :

10200pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G6

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

502 mJ

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 90A, 10V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

720A

Drain-source On Resistance-Max :

0.0024Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

RoHS Status :

ROHS3 Compliant