IPB023N04NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 95µA

JEDEC-95 Code :

TO-263AB

DS Breakdown Voltage-Min :

40 V

Terminal Finish :

MATTE TIN

Technology :

MOSFET (Metal Oxide)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Supplier Device Package :

PG-TO263-3-2

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

150 mJ

Power Dissipation-Max (Abs) :

167 W

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Product Status :

Active

FET Type :

N-Channel

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 90A, 10V

Pin Count :

4

Operating Temperature :

-55°C ~ 175°C (TJ)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Subcategory :

FET General Purpose Power

Qualification Status :

Not Qualified

Series :

OptiMOS™3

JESD-609 Code :

e3

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation (Max) :

167W (Tc)

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0023 Ω

Drain Current-Max (Abs) (ID) :

90 A

Package :

Bulk

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

10000 pF @ 20 V

Manufacturer :

Infineon Technologies AG

Number of Elements :

1

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

400 A

Drain to Source Voltage (Vdss) :

40 V