IPB021N06N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

480 A

Power Dissipation :

250 W

Drain to Source Resistance :

2.1 mΩ

JEDEC-95 Code :

TO-263AB

Subcategory :

FET General Purpose Power

Terminal Form :

Gull wing

RoHS :

Compliant

Vgs(th) (Max) @ Id :

4V @ 196µA

Rise Time :

80 ns

Power Dissipation-Max (Abs) :

250 W

Channel Type :

N

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 100A, 10V

Series :

OptiMOS™ 3

Input Capacitance :

23 nF

Technology :

MOSFET (Metal Oxide)

Case Connection :

DRAIN

Pin Count :

4

Power Dissipation (Max) :

250W (Tc)

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Rds On Max :

2.1 mΩ

Avalanche Energy Rating (Eas) :

634 mJ

Number of Elements :

1

Supplier Device Package :

PG-TO263-3

Continuous Drain Current (ID) :

120 A

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

275 nC @ 10 V

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60 V

ECCN Code :

EAR99

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60 V

Continuous Drain Current Id :

120

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Status :

Active

Operating Temperature :

-55°C ~ 175°C (TJ)

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

120 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

23000 pF @ 30 V

Element Configuration :

Single

Surface Mount :

yes

Mount :

Surface Mount

Max Operating Temperature :

175 °C

Qualification Status :

Not Qualified

Turn-On Delay Time :

41 ns

Transistor Element Material :

SILICON

Number of Terminals :

2

Drain-source On Resistance-Max :

0.0021 Ω

FET Feature :

-

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250 W

Turn-Off Delay Time :

79 ns

Manufacturer :

Infineon Technologies AG

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

60 V